High gain fully on-chip LNAs with wideband input matching in 0.15-μm GaAs pHEMT for radio astronomical telescope
Journal
European Microwave Week 2015: "Freedom Through Microwaves", EuMW 2015 - Conference Proceedings; 2015 45th European Microwave Conference Proceedings, EuMC
Pages
235-238
Date Issued
2015
Author(s)
Abstract
This paper presents two fully on-chip 0.15-μm GaAs pHEMT low-noise amplifiers (LNAs) designed in 1.6-3.1 GHz and 2.8-5.2 GHz for Square Kilometre Array (SKA) astronomical application. The LNAs using an additional parallel capacitor at the drain of the first stage achieve wideband input return loss without using a lossy series inductor at the gate of the first stage for input matching. The LNAs designed in 1.6-3.1/2.8-5.2 GHz demonstrate measured |S21| over 28.7/27.1 dB with |S11| better than -10/-8 dB and measured noise figure between 0.67-0.85/0.88-1.1 dB in the desired band, respectively.
SDGs
Type
conference paper