Observation of 394 nm electroluminescence from low-temperature sputtered n-ZnOSi O2 thin films on top of the p-GaN heterostructure
Journal
Applied Physics Letters
Journal Volume
91
Journal Issue
9
Date Issued
2007
Author(s)
Abstract
The authors report on the 394 nm UV light emission from low-temperature sputtered n-ZnOSi O2 thin films on top of the p-GaN heterostructure. They compare samples with and without a Si O2 current blocking layer. With a Si O2 layer, electroluminescence spectrum shows a sharp emission peak at 394 nm, which is attributed to the recombination of accumulated carriers between n-ZnOSi O2 and p-GaNSi O2 junctions. As for the sample without a Si O2 layer, a broadband ranging from 400 to 800 nm is observed, which is due to Mg+ deep-level transition in the GaN along with defects in the ZnO layers. © 2007 American Institute of Physics.
Other Subjects
Defects; Electroluminescence; Gallium nitride; Heterojunctions; Light emission; Low temperature effects; Semiconducting zinc compounds; Current blocking layers; Recombination; Thin films
Type
journal article