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College of Engineering / 工學院
Materials Science and Engineering / 材料科學與工程學系
Dual-functional memory and threshold resistive switching based on the push-pull mechanism of oxygen ions
Details
Dual-functional memory and threshold resistive switching based on the push-pull mechanism of oxygen ions
Journal
Scientific Reports
Journal Volume
6
Date Issued
2016
Author(s)
Huang, Y.-J.
Chao, S.-C.
Lien, D.-H.
Wen, C.-Y.
He, J.-H.
SI-CHEN LEE
CHENG-YEN WEN
DOI
10.1038/srep23945
URI
https://scholars.lib.ntu.edu.tw/handle/123456789/491107
URL
https://www.scopus.com/inward/record.uri?eid=2-s2.0-84964043507&doi=10.1038%2fsrep23945&partnerID=40&md5=ead95cf0220ae53d71471b8062b9739a
SDGs
[SDGs]SDG7
Type
journal article