Graphene-based quantum Hall arrays in cross–square recursion configurations
Journal
AIP Advances
Journal Volume
15
Journal Issue
8
Start Page
085225
ISSN
2158-3226
Date Issued
2025-08-01
Author(s)
Tran, N. T. M.
Musso, M.
Scaletta, D. S.
Lin, W.-C.
Ortiz Jimenez, V.
Jarrett, D. G.
Ortolano, M.
Richter, C. A.
Newell, D. B.
Rigosi, A. F.
Abstract
In electrical metrology, the quantum Hall effect is accessed at the Landau level filling factor ν = 2 plateau to define and disseminate the unit of electrical resistance (ohm). The robustness of the plateau is only exhibited at this Landau level filling factor and thus places a constraint on the quantized resistances that are accessible when constructing quantized Hall array resistance standards (QHARSs) using epitaxial graphene on SiC. To overcome device constraints by using Hall elements in series or in parallel, this work approaches the fabrication of a cross-square network configuration, which is similar to but departs slightly from conventional wye-delta designs and achieves significantly higher effective quantized resistance outputs. Furthermore, the use of pseudofractal-like recursion amplifies the ability to reach high resistances. QHARS devices designed as the ones here are shown to achieve an effective resistance of 55.81 MΩ in one configuration and 27.61 GΩ in another, with a hypothetically projected 317.95 TΩ that could be accessed with more specialized equipment. Teraohmmeter measurements reveal the limits of conventional wet cryogenic systems due to resistance leakage. Ultimately, this work builds on the capability of realizing exceptionally high-value quantum resistance standards.
Publisher
AIP Publishing
Type
journal article