Efficiency dip observed with InGaN-based multiple quantum well solar cells
Journal
Optics Express
Journal Volume
22
Journal Issue
25
Pages
A1753-A1760
Date Issued
2014
Author(s)
Abstract
The dip of external quantum efficiency (EQE) is observed on In(0.15)Ga(0.85)N/GaN multiple quantum well (MQW) solar cells upon the increase of incident optical power density. With indium composition increased to 25%, the EQE dip becomes much less noticeable. The composition dependence of EQE dip is ascribed to the competition between radiative recombination and photocurrent generation in the active region, which are dictated by quantum-confined Stark effect (QCSE) and composition fluctuation in the MQWs.
SDGs
Type
journal article