Mechanical Properties of Silicon Dioxide Film Deposited by Atmospheric Pressure Plasma Chemical Vapor Deposition
Date Issued
2007
Date
2007
Author(s)
Kuo, Chih-Cheng
DOI
zh-TW
Abstract
Atmospheric pressure plasma jet (APPJ) chemical vapor deposition (CVD) technique is utilized in this paper. The jet operates by feeding nitrogen gas between two electrodes that driven by a 20 kHz frequency and 500 W power source at atmospheric pressure and near room temperature. The organic silicon source Hexamethyldisazane (HMDSN) was utilized as the precursor of silica films. With distinct experiment factors, such as the flow rate of precursor, deposition time and substrate temperature, we measure the mechanical properties via nano-indentation system. Moreover, the variation of the mechanical properties analyzed by Fourier-transform infrared spectrometer (FTIR), atomic force microscope (AFM) and scanning electron microscopy (SEM) were obtained that correlated with surface porosity.
The results presented that the Young’s modulus of silica films deposited by APPJ CVD increased with increases in the substrate temperature, however, decreased with increases in the active precursor concentration and deposition time. When the films were deposited near room temperature after annealing in air, these films exhibited denser structure and higher Young’s modulus. Comparing non-annealing with annealing at 800 ℃ in 5 hours, the Young’s modulus increased from 40.2 GPa to 54.7 GPa and average maximum depth (Rvm) modified more about 12 %.
Subjects
大氣電漿
楊氏模數
奈米壓痕
二氧化矽薄膜
退火處理
Atmospheric pressure plasma
Nano Indentation
SiO2
Anneal
Type
thesis
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