GeO2 passivation for low surface recombination velocity on Ge surface
Journal
IEEE Electron Device Letters
Journal Volume
34
Journal Issue
3
Pages
444-446
Date Issued
2013
Author(s)
Abstract
We report that passivation reduces surface recombination on Ge through both the reduction of interface state density and the field effect of the oxide charge. Furthermore, the photoluminescence intensity increases with increasing thickness, mainly because of the reduction in interface state density since the fixed charge density remains almost constant. The direct-to-indirect band-gap emission ratio also remains unchanged after passivation. The p-Ge (1–3 ) lifetime is 65 , as determined from the quasi-steady-state photoconductance on Ge wafers with different thicknesses. A 47-nm-thick layer can reduce the surface recombination velocity on Ge to 70 cm/s.
Type
journal article