GeO2 passivation for low surface recombination velocity on Ge surface

Journal

IEEE Electron Device Letters

Journal Volume

34

Journal Issue

3

Pages

444-446

Date Issued

2013

Author(s)

Chen, Y.-Y.

Chang, H.-C.

Chi, Y.-H.

Huang, C.-H.

DOI

10.1109/LED.2013.2242039

URI

http://www.scopus.com/inward/record.url?eid=2-s2.0-84874651594&partnerID=MN8TOARS

http://scholars.lib.ntu.edu.tw/handle/123456789/380230

Type

journal article