Si/ Si0.2Ge0.8 /Si quantum well Schottky barrier diodes
Journal
Applied Physics Letters
Journal Volume
94
Journal Issue
10
Date Issued
2009
Author(s)
Abstract
The hole confinement due to the valence band offset of the Si/SiGe/Si quantum well causes the shrinkage of depletion region for the n-type Si/Si0.2Ge0.8/Si Schottky barrier diodes with Pt gates. The capacitance of Si/Si0.2Ge0.8/Si Schottky diodes has approximately two times the capacitance of the control Si device. Moreover, the high electrical field leads to a high thermionic-field emission current and a large image-force lowering at both reverse and forward biases. The conventional capacitor-voltage method cannot be used to accurately measure the barrier height of Si/SiGe/Si quantum well Schottky diodes due to the shrinkage of depletion region.
SDGs
Type
journal article