A D-Band High-Gain Low-Noise Amplifier with Transformer-Embedded Network _Grant-infomax-Core in 40-nm CMOS
Journal
IEEE Microwave and Wireless Technology Letters
Start Page
1
End Page
4
ISSN
2771-9588
2771-957X
Date Issued
2024
Author(s)
Abstract
Abstract A D-band high-gain low-noise amplifier (LNA) utilizing novel transformer-based four-stage Gmax-cores in a 40-nm bulk CMOS process is proposed in this letter. The Gmax -core is constructed by a Y-embedded network using a transformer, which separates the gate and drain bias. This approach solved the limitations in the traditional Gmax-core structure which the gate and drain bias are constrained to the same voltage. The power consumption is reduced and gain is improved, while achieving a lower noise figure (NF). A 27.74-dB peak gain is measured at 143.5 GHz, with a 3-dB bandwidth of 7 GHz, and the minimum NF is 7.6 dB. The fabricated chip occupies an area of 0.35 mm2 with all pads and the dc power consumption is 27.1 mW.
SDGs
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Type
journal article