Skip to main content
English
中文
Log In
Log in
Log in with ORCID
NTU Single Sign On
New user? Click here to register.
Have you forgotten your password?
Home
College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
Effects of array type of dummy active diffused region and gate geometries on narrow NMOSFETs with SiC S/D stressors
Details
Effects of array type of dummy active diffused region and gate geometries on narrow NMOSFETs with SiC S/D stressors
Journal
2014 IEEE International Nanoelectronics Conference
Date Issued
2016
Author(s)
Lee, C.-C.
Hsieh, C.-P.
Liao, M.-H.
Cheng, S.-W.
Guo, Y.-H.
DOI
10.1109/INEC.2014.7460419
URI
https://scholars.lib.ntu.edu.tw/handle/123456789/404509
Type
conference paper