Extremely broadband superluminescent diodes/semiconductor optical amplifiers in optical communication band
Journal
Pacific Rim Conference on Lasers and Electro-Optics, CLEO
Journal Volume
1
Date Issued
2003
Author(s)
URI
Abstract
Superluminescent diodes with broad emission bandwidth characteristics and the mechanism of carrier distribution in the active layer are explored. Asymmetric active layer structure is used for the broadband purpose. Using InP substrate with five 60Å InGaAsP quantum wells and two 150Å InGaAs quantum wells, we get a very broad emission spectrum. The spectral width is nearly 400nm, almost covering the range from 1250nm to 1650nm.
Subjects
Asymmetric multiple quantum wells; Bent waveguide; Broadband; Superluminescent diodes
SDGs
Other Subjects
Bandwidth; Optical communication; Optical fibers; Semiconducting indium phosphide; Semiconductor lasers; Semiconductor quantum wells; Superluminescent diodes (SLD); Light amplifiers
Type
conference paper