Room-temperature Operation of InAs Quantum-dot Photonic Crystal Lasers
Date Issued
2012
Date
2012
Author(s)
Lin, Po-Chi
Abstract
We have successfully fabricated photonic crystal slab nanocavities on a GaAs substrate with a single layer of InAs quantum dots as active medium. The photonic crystal nanocavities were fabricatedby E-beam lithography, dry etching, and wet etching. Lasing can be observed in continuous wave operation at room temperature, and the threshold pump power is 11.6 μW.
We designed a point defect structure, called L3 defect, which consists of three missing air holes along one direction. We observed the resonant mode has red shift with different r/a ratios. The two nearby holes were shrunk and shifted in the one direction to produce a nanocavity with a higher quality factor and lower threshold power.
We performed the micro-photoluminescence measurements on the fabricated devices at different temperatures. The lowest threshold power we observed at 80 K is 217 nW. The cavity mode can still be observed clearly at room temperature with the threshold power of 11.6 μW. Because the effective refractive index of the resonant cavities changes with temperature, the mode shows red shift of 0.054 nm/K. Due to the heat dissipation issue in photonic crystal cavities, higher red shifts are observed for higher pumping, especially at higher operating temperature.
Subjects
Room-temperature
InAs
Photonic Crystal Lasers
Type
thesis
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