A 60-GHz 20.6-dBm symmetric radial-combining wideband power amplifier with 20.3% peak PAE and 20-dB gain in 90-nm CMOS
Journal
IEEE MTT-S International Microwave Symposium Digest
Journal Volume
2016-August
Date Issued
2016
Author(s)
Abstract
A 60-GHz 1.2-V wideband power amplifier (PA) with a compact 4-way radial power combiner implemented in 90-nm CMOS process is presented in this paper. The transformer-based radial power combiner with 1-dB insertion loss at 60 GHz and 0.043-mm 2 compact size is designed for high output power combining and wideband load-pull matching. This PA achieves saturated output power (P SAT ) of 20.6 dBm, maximum power added efficiency (PAE max ) of 20.3%, and 20.1-dB small-signal gain (S 21 ) at 60 GHz. The PA maintains flat 20-dBm PSAT with PAE max better than 17.3% within 50-64 GHz, and it has a 3-dB bandwidth (3-dB BW) of 24.5 GHz (41.8-66.3 GHz). The chip area without pads is 0.432 mm 2 . To the author's best knowledge, this PA with flat 20-dBm P SAT presents the widest large-signal bandwidth (50-64 GHz) compared to other 60-GHz CMOS PA.
SDGs
Type
conference paper