Base transit time of graded-base Si/SiGe HBTs considering recombination lifetime and velocity saturation

Resource

Solid-State Electronics 48 (2): 207-215

Journal

Solid-State Electronics

Journal Volume

48

Journal Issue

2

Pages

207-215

Date Issued

2004

Date

2004

Author(s)

Chang, S. T.

Liu, C. W.

Lu, S. C.

URI

Type

journal article

File(s)

Name

38.pdf

Size

382.81 KB

Format

Adobe PDF

Checksum

(MD5):466ecc81f23f13084db25653d8b97464