Growth Model of a GaN Nanorod with the Pulsed-growth Technique of Metalorganic Chemical Vapor Deposition
Journal
Crystal Growth & Design
Journal Volume
18
Journal Issue
7
Pages
461
Date Issued
2018
Author(s)
Abstract
A theoretical model for the growth process of a GaN nanorod (NR) based on the combined effect of vapor–liquid–solid (VLS) and vapor–solid (VS) modes in pulsed growth with metalorganic chemical vapor deposition is proposed and formulated. In particular, the VS-growth mechanism for forming the gallium-rich line-markers, which provide us with the growth chronology of an NR, is proposed by introducing an incubation time for surface deposition. The evolutions of gallium-droplet base radius and aspect ratio and the increase of precipitated GaN volume during a transition process of a two-section NR are formulated and numerically studied to show the consistent results with experimental data. The relative contributions of the VLS and VS growths in such a transition process are also numerically illustrated. Besides, the experimentally observed increase of the slant-facet angle from the {1–102}- to {1–101}-plane is modeled, formulated, and numerically simulated. In fitting the numerical results with experimental data, a few important kinetic parameters can be determined.
Type
journal article