Quantum confinement effects in strained silicon-germanium alloy quantum wells
Journal
Applied Physics Letters
Journal Volume
60
Journal Issue
17
Pages
2135-2137
Date Issued
1992
Author(s)
Xiao, X.
Liu, C.W.
Sturm, J.C.
Lenchyshyn, L.C.
Thewalt, M.L.W.
Gregory, R.B.
Fejes, P.
Abstract
We report the first detailed study of quantum confinement shifts of band-edge photoluminescence energies in Si/strained Si1−xGex/Si single quantum wells. A quantum confinement energy of up to 45 meV has been observed for quantum wells as small as 33 Å in width. The experimental results are in good agreement with a calculation of the hole confinement energies. The hole energy levels in quantum wells were obtained by numerically solving effective-mass equations with proper matching boundary conditions at interfaces using a 6×6 Luttinger–Kohn Hamiltonian. Both strain and spin-orbit interactions were included in the calculation.
SDGs
Type
journal article