Low thermal budget epitaxial lift off (ELO) for Ge (111)-on-insulator structure
Journal
Japanese Journal of Applied Physics
Journal Volume
61
Journal Issue
SC
Start Page
SC1024
ISSN
0021-4922
1347-4065
Date Issued
2022-02-11
Author(s)
Wen Hsin Chang
Hsien-Wen Wan
Yi-Ting Cheng
Yen-Hsun G. Lin
Toshifumi Irisawa
Hiroyuki Ishii
Jueinai Kwo
Tatsuro Maeda
Abstract
Germanium-on-insulator (GeOI) structures with a surface orientation of (111) have been successfully fabricated by using low thermal budget epitaxial-lift-off (ELO) technology via direct bonding and selective etching. The material characteristics and transport properties of the Ge(111)OI structure have been systematically investigated through secondary-ion mass spectrometry, Raman spectroscopy, X-ray diffraction, high-resolution transmission electron microscope, and Hall measurement. The transferred Ge (111) layer remained almost intact from the as-grown epitaxial layers, indicating the benefits of ELO technology. The low thermal budget ELO technology demonstrated in this work is promising to integrate Ge channels with different surface orientations on Si (100) substrates for future monolithic 3D applications.
Subjects
111
ELO
Ge
GeOI
Publisher
IOP Publishing
Type
journal article