Effect of capping on the Dirac semimetal Cd3As2 on Si grown via molecular beam epitaxy
Journal
Nanotechnology
Journal Volume
36
Journal Issue
16
Start Page
165001
ISSN
0957-4484
1361-6528
Date Issued
2025-03-10
Author(s)
Lin, Wei-Chen
Chuang, Chiashain
Wu, Meng-Ting
Lee, Jie-Ying
Lee, Hsin-Hsuan
Yang, Cheng-Hsueh
Ci, Ji-Wei
Xie, Tian-Shun
Watanabe, Kenji
Taniguchi, Takashi
Aoki, Nobuyuki
Wang, Jyh-Shyang
Abstract
Given the promising applications of large magnetoresistance in the Dirac semimetal cadmium arsenide (Cd3As2), extensive research into Si-compatible Cd3As2 devices is highly desirable. To prevent surface degradation and oxidation, the implementation of a protection layer on Cd3As2 is imperative. In this study, two vastly different protecting layers were prepared on top of two Cd3As2 samples. A zinc telluride layer was grown on top of one Cd3As2 film, giving rise to a ten-fold increased mobility, compared to that of the pristine Cd3As2 sample. Interestingly, unusual negative magnetoresistance is observed in the hexagonal boron nitride-capped Cd3As2 device when a magnetic field is applied perpendicularly to the Cd3As2 plane. This is in sharp contrast to the chiral anomaly that requires a magnetic field parallel to the Cd3As2 plane. We suggest that a protection layer on molecular beam epitaxy-grown Cd3As2 should be useful for realising its great device applications in magnetic sensing.
Subjects
anomalous negative magnetoresistance
Cd3As2 heterostructure
Dirac semimetal
SDGs
Publisher
IOP Publishing
Type
journal article