Top-gate Staggered a-IGZO TFTs Adopting the Bi-layer Gate Insulator for Driving AMOLED
Journal
IEEE Transactions on Electron Devices
Journal Volume
59
Journal Issue
6
Pages
1701-1708
Date Issued
2012-06
Author(s)
Chih-Wei Chien
Hsing-Hung Hsieh
Yung-Hui Yeh
Cheng, Chun-Cheng
Chih-Ming Lai
Ming-Jiue Yu
Abstract
We report the successful implementation of top-gate staggered amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) with decent performance and environmental stability by adopting the SiO x/SiN x bilayer gate-insulator stack. The PECVD SiO x and SiN x were used as the first and second gate insulators, respectively, in the TFT to simultaneously ensure the channel/gate-insulator interface properties for device performances and the water impermeability of the gate insulator for effective passivation of the channel layer. It was also found that the cleanliness of the back-channel interface (and thus the effectiveness of the source/drain etching process) is critical for the successful implementation of the top-gate staggered a-IGZO TFTs. In this paper, a two-step wet-etching process for source/drain was used to ensure the quality of the back-channel interface. Finally, we successfully integrated the top-gate staggered a-IGZO TFTs into a working 2.2-in active matrix organic light-emitting display panel, demonstrating the real use of the developed TFTs. © 1963-2012 IEEE.
Subjects
Active matrix organic light-emitting display (AMOLED); bilayer gate insulator; In-Ga-Zn-O (IGZO); thin-film transistors (TFTs)
Other Subjects
Active matrixes; AM-OLED; Back channels; Bi-layer; Channel layers; Device performance; Environmental stability; Etching process; Gate insulator; In-ga-zn-o; Interface property; Organic light-emitting; Thin-film transistor (TFTs); Display devices; Etching; Gallium; Light emission; Light emitting diodes; Semiconducting indium compounds; Silicon nitride; Zinc; Thin film transistors
Type
journal article