Transport properties of gallium nitride nanowire metal-oxide-semiconductor field effect transistors
Journal
Applied Physics Letters
Journal Volume
99
Pages
152108
Date Issued
2011-01
Author(s)
Abstract
We investigated the transport properties of [112¯0]-gallium nitride (GaN)/gallium oxide (Ga2O3) single nanowire metal-oxide-semiconductor field-effect-transistor grown on (0001) sapphire substrates. With 0.1 μm gate-length and 60 nm wire-size, the device exhibits maximum transconductance of 85 μS, saturation current of 105 μA, and unity current gain bandwidth ft at 95 GHz. From a three-dimensional (3D) diffusion-and-drift model analysis, polarization-induced negative space charge of −3 × 1012 cm−2 at the back interface of GaN/sapphire, positive space charge of 7 × 1012 cm−2 at the inclined semi-polar {11¯01¯} GaN/Ga2O3 interfaces with screening by two-dimensional electron gas to keep charge neutrality were found responsible for the high-speed transport characteristics.
SDGs
Type
journal article