Diffusion and marker experiments for the newly discovered CuIn2 compound
Journal
Materials Characterization
Journal Volume
217
Start Page
114316
ISSN
1044-5803
Date Issued
2024-11
Author(s)
DOI
10.1016/j.matchar.2024.114316
Abstract
Herein, CuIn2 is not identified as a stable phase in the Cu[sbnd]In binary phase diagram. However, several studies have reported the existence of CuIn2 at low temperatures. In this study, an electroplating process was used to examine the solid-state interfacial reactions between indium and copper. An indium layer with a thickness of 50 μm was electroplated onto a 1 mm thick Cu substrate at 25 °C, and the resultant Cu/In diffusion couples were subjected to aging processes at 60 °C, 80 °C, 100 °C, and 120 °C for up to 1000 h. These findings indicate that both CuIn2 and Cu11In9 phases were formed at 60 °C, 80 °C, and 100 °C, whereas only the Cu11In9 phase was detected at 120 °C. The growth kinetics of the Cu/In intermetallic compounds adhered to a parabolic law, implying that the reactions were governed by diffusion-controlled mechanisms. The utilization of a Ta diffusion marker in the experiments revealed that indium acts as the predominant diffusing species within the CuIn2 intermetallic compound.
Subjects
Cu–in intermetallic compounds
Interfacial reactions
Low-temperature soldering
Solid-state reaction
Publisher
Elsevier BV
Type
journal article