Preparation and characterization of Cd(S,Se) films via the selenium-vapor-assisted annealing process
Journal
Journal of Alloys and Compounds
Journal Volume
543
Pages
84-89
Date Issued
2012
Author(s)
Abstract
Cd(S,Se) thin films were successfully synthesized on the glass substrates via the CBD method followed by selenization. Cd(S,Se) compounds were formed when the selenization temperature exceeded 325 ¢XC. XRD analysis reveals that the prepared films had a cubic structure. The contents of selenium ions in Cd(S,Se) films were increased with increasing reaction temperatures and duration. The band gap of Cd(S,Se) films was controlled between 2.28-1.77 eV by adjusting the selenium-ion contents. All of the synthesized films exhibited n-type characteristics, as determined from Hall effect measurement. The carrier concentration and the conductivity of CdS films were significantly promoted with the selenization process. ? 2012 Elsevier B.V. All rights reserved.
Subjects
CdS
CdSe
Selenization
Thin films
Type
journal article