Dephasing in InAs/GaAs quantum dots
Journal
Physical Review B - Condensed Matter and Materials Physics
Journal Volume
60
Journal Issue
11
Pages
7784-7787
Date Issued
1999
Author(s)
Abstract
The room-temperature dephasing in InAs/GaAs self-assembled quantum dots is measured using two independent methods: spectal-hole burning and four-wave mixing. Dephasing times weakly dependent on the excitation density are found, with a low density value of 290±80fs from spectal-hole burning and of 260±20fs from four-wave mixing. © 1999 The American Physical Society.
Type
journal article