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College of Science / 理學院
Applied Physics / 應用物理研究所
Advances in GaAs Mosfet's Using Ga 2 O 3 (Gd 2 O 3) as Gate Oxide
Details
Advances in GaAs Mosfet's Using Ga 2 O 3 (Gd 2 O 3) as Gate Oxide
Journal
MRS Proceedings
Journal Volume
573
Pages
219
Date Issued
1999
Author(s)
Wang, YC
MINGHWEI HONG
Kuo, JM
Mannaerts, JP
Kwo, J
Tsai, HS
Krajewski, JJ
Weiner, JS
Chen, YK
Cho, AY
URI
http://scholars.lib.ntu.edu.tw/handle/123456789/349439
Type
journal article
