Interdisciplinary characterization of sandwiched SiGe thin layers grown by molecular beam epitaxy
Resource
J. Chinese Institute of Electrical Engineering,2,69-73.
Journal
International Electron Devices and Materials Symposium
Pages
2-3-9-2-3-12
Date Issued
1995-01
Date
1995-01
Author(s)
Feng, Z.C.
Watt, F.
Lee, K.K.
Wee, A.T.S.
Hng, H.H.
Arbet-Engels, V.
Karunasiri, R.P.G.
Wang, K.L.
William, K.P.J.
Type
journal article