The effect of Ge autodoping and outdiffusion on InGaP ordering
Date Issued
2014
Date
2014
Author(s)
Ho, Hao-I
Abstract
This thesis investigates the InGaP ordering affected by the difference in Ge concentration in epilayer caused by autodoping and outdiffusion.
We use photoluminescence and secondary ion mass spectroscopy to analyze the orderness and Ge concentration under different depth. Owing to the Ge autodoping won’t affect the surface reconstruction during the growth, in the edge sample, although the top layer and the middle layer have the same autodoping concentration, the middle layer has lower ordering. Ge will destroy the ordering structure by diffusion, and is related to Ge concentration and heating time. Because of the difference in Ge concentration, the ordering in the center sample is higher than that in the edge sample. And although the Ge concentration in the top layer of edge sample is high, the heating time isn’t enough for diffusion to destroy the ordering structure, so it keep the same ordering with center sample. This can be confirm in RTA treatment, after 600℃ annealing for 30 seconds, the ordering structure in the top layer of edge sample will no longer exists.
Finally, we use different direction scattering of polarized PL to know that there is only CuPtB1 ordering structure in the center sample. And there are two degree of ordering in the edge sample, the disorder structure in the bottom layer and with CuPtB1 and CuPtB2 ordering in the top layer.
We use photoluminescence and secondary ion mass spectroscopy to analyze the orderness and Ge concentration under different depth. Owing to the Ge autodoping won’t affect the surface reconstruction during the growth, in the edge sample, although the top layer and the middle layer have the same autodoping concentration, the middle layer has lower ordering. Ge will destroy the ordering structure by diffusion, and is related to Ge concentration and heating time. Because of the difference in Ge concentration, the ordering in the center sample is higher than that in the edge sample. And although the Ge concentration in the top layer of edge sample is high, the heating time isn’t enough for diffusion to destroy the ordering structure, so it keep the same ordering with center sample. This can be confirm in RTA treatment, after 600℃ annealing for 30 seconds, the ordering structure in the top layer of edge sample will no longer exists.
Finally, we use different direction scattering of polarized PL to know that there is only CuPtB1 ordering structure in the center sample. And there are two degree of ordering in the edge sample, the disorder structure in the bottom layer and with CuPtB1 and CuPtB2 ordering in the top layer.
Subjects
磷化銦鎵
鍺
價帶分裂
有序排列
自摻雜
外擴散
Type
thesis
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