Light extraction enhancement of a GaN-based light-emitting diode through grating-patterned photoelectrochemical surface etching with phase mask interferometry
Journal
IEEE Photonics Technology Letters
Journal Volume
22
Journal Issue
9
Pages
640-642
Date Issued
2010
Author(s)
Abstract
The enhancement of light extraction by fabricating a surface grating structure around the mesa of a light-emitting diode (LED) with an approach combining photoelectrochemical (PEC) wet etching and phase mask interferometry is demonstrated. The PEC etching rate is controlled by the intensity of illuminating UV light, which is spatially modulated by the fringe pattern of phase mask interferometry, for forming the grating structure. Without affecting the resistance characteristics of the device, the diffraction of such a grating structure leads to LED output enhancement by > 43% on either the top or bottom side.
Type
journal article