Improvement in oxide thickness uniformity by repeated spike oxidation
Journal
IEEE Transactions on Semiconductor Manufacturing
Journal Volume
14
Journal Issue
3
Pages
227-230
Date Issued
2001
Author(s)
Abstract
A new repeated spike oxidation (RSO) method used in a rapid thermal processing system was proposed in this work. Simulation results predict the temperature distribution on the wafer would be improved by this RSO method. We proposed that the improvement in wafer temperature uniformity is mainly caused by self-compensation in radiation heat absorption rate. Experimental data pointed out that the new method can produce more uniform oxide thickness than the conventional one under an intentionally created nonuniform heating environment.
SDGs
Type
journal article