Investigation of Resistive Switching Behavior usingi/ZnO Nanobelt/Ti for Non-Volatile Memorypplication
Date Issued
2009
Date
2009
Author(s)
Chiang, Yen-Te
Abstract
The phenomenon of resistive switching in single crystal of zinc oxide nanobelt(ZnO NB) fabricated by catalytically activated vapor phase transport and condensation deposition process has been investigated. From measuring the currentI)-voltage (V) curve, the ZnO NB reveals some interesting and distinctive characteristics not found in previous unipolar resistive switching behavior of bulk film capacitors. The smaller set voltage compared to reset voltage is first observedand the resistance ratio of HRS to LRS is in the range of 4-5 orders. Both high resistance state (HRS) and low resistance state (LRS) is tunable by means of applied voltage. The dominant carrier transport and resistive switching mechanism was elucidated using theory of space-charge-limited current incorporated with oxygen vacancy for carrier transport site. High aspect ratio factor of ZnO NB different from bulk film is obtained from crossover voltage between liner region and quadraticegion of I-V curve.
Subjects
nanobelt
set voltage
reset voltage
space-charge-limited current
aspect ratio
Type
thesis
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