Precise Fermi level engineering in a topological Weyl semimetal via fast ion implantation
Journal
Applied Physics Reviews
Journal Volume
11
Journal Issue
2
Start Page
021429
ISSN
19319401
Date Issued
2024
Author(s)
Mandal, Manasi
Chotrattanapituk, Abhijatmedhi
Woller, K. B.
Wu, Lijun
Xu, Haowei
Mao, Nannan
Okabe, Ryotaro
Boonkird, Artittaya
Nguyen, Thanh
Abstract
The precise controllability of the Fermi level is a critical aspect of quantum materials. For topological Weyl semimetals, there is a pressing need to fine-tune the Fermi level to the Weyl nodes and unlock exotic electronic and optoelectronic effects associated with the divergent Berry curvature. However, in contrast to two-dimensional materials, where the Fermi level can be controlled through various techniques, the situation for bulk crystals beyond laborious chemical doping poses significant challenges. Here, we report the milli-electron-volt (meV) level ultra-fine-tuning of the Fermi level of bulk topological Weyl semimetal tantalum phosphide using accelerator-based high-energy hydrogen implantation and theory-driven planning. By calculating the desired carrier density and controlling the accelerator profiles, the Fermi level can be experimentally fine-tuned from 5 meV below, to 3.8 meV below, to 3.2 meV above the Weyl nodes. High-resolution transmission electron microscopy reveals the crystalline structure is largely maintained under irradiation, while electrical transport indicates that Weyl nodes are preserved and carrier mobility is also largely retained. Our work demonstrates the viability of this generic approach to tune the Fermi level in semimetal systems and could serve to achieve property fine-tuning for other bulk quantum materials with ultrahigh precision.
Subjects
Doping (additives)
Fermi Level
High Resolution Transmission Electron Microscopy
Ion Implantation
Tantalum Compounds
Topology
Bulk Crystals
Chemical Doping
Divergents
Electron Volt
Fast Ions
Fine Tuning
Ions Implantation
Pressung
Two-dimensional Materials
Ultra-fines
Tuning
Publisher
American Institute of Physics
Type
journal article