Tilted-charge high speed (7 GHz) light emitting diode
Journal
Applied Physics Letters
Journal Volume
94
Journal Issue
23
Date Issued
2009
Author(s)
Abstract
We demonstrate a higher speed form of light emitting diode (LED), an asymmetrical two-junction tilted-charge LED, utilizing an n -type buried "drain" layer beneath the p -type "base" quantum-well (carrier and photon) active region. The drain layer tilts and pins the charge in the manner of a heterojunction bipolar light emitting transistor (HBLET), selecting and allowing only "fast" recombination (recombination lifetime τB of the order of base transit time τt). The tilted-charge LED, simple in design and construction, is capable of operation at low current in spontaneous recombination at a 7 GHz bandwidth or even higher with more refinement. © 2009 American Institute of Physics.
SDGs
Type
journal article