Demonstration of HOT LWIR T2SLs InAs/InAsSb photodetectors grown on GaAs substrate
Journal
Infrared Physics and Technology
Journal Volume
95
Pages
222-226
Date Issued
2018
Author(s)
Michalczewski, K.
Kubiszyn, ?.
Martyniuk, P.
Wu, C.H.
Jure?czyk, J.
Grodecki, K.
Benyahia, D.
Rogalski, A.
Piotrowski, J.
Abstract
We report on of high operating temperature (HOT) long-wavelength infrared radiation (LWIR) type-II superlattices (T2SLs) InAs/InAsSb photoconductor grown on buffered semi-insulating GaAs substrate. The absorber of the device consists of a 300 periods of T2SLs InAs/InAsSb. The high resolution X-ray diffraction (HRXRD), photoluminescence (PL), Hall, Optical Parametric Oscillator (OPO) measurements are presented and analyzed. The detector reached a 50% cut-off wavelength of 9.8 μm and 10.4 μm at 210 K and 230 K, respectively. The time constant of 24 ns is observed at 210 K under 0.5 V bias. The detectivity (D∗) of ∼ 2.0 × 1010 cm Hz1/2/W at 210 K is reached.
SDGs
Type
journal article