Determination of gap state density distribution in hydrogenated amorphous silicon from light-induced effects
Journal
Journal of Applied Physics
Journal Volume
62
Journal Issue
4
Pages
1514-1516
Date Issued
1987
Author(s)
Huang, Y.-S.
Abstract
Gap state density distribution in hydrogenated amorphous silicon has been obtained from the effect of light illumination on the dark conductivity. This new technique allows us to determine the bulk density of state distribution within approximately 400 meV below the Fermi level.
Type
journal article