Liquid-Phase Epitaxy of Gaalas on Gaas Substrates with Fine Surface Corrugations

Journal
Applied Physics Letters
Journal Volume
24
Journal Issue
10
Pages
466-468
Date Issued
1974
Author(s)
Nakamura, M.
Aiki, K.
Umeda, J.
Yariv, A.
Yen, Hw
Morikawa, T.
DOI
URI
Abstract
Liquid phase epitaxy of GaAlAs was performed on GaAs fine surface corrugations. By optimizing the growth conditions, GaAlAs layers were grown successfully with only minimal meltback. © 1974 American Institute of Physics.
Type
journal article

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