Roughness-enhanced reliability of MOS tunneling diodes

Journal

IEEE Electron Device Letters

Journal Volume

23

Journal Issue

7

Pages

431-433

Date Issued

2002

Author(s)

Lin, C.-H.

Yuan, F.

Shie, C.-R.

Chen, K.-F.

Hsu, B.-C.

Lee, M.H.

DOI

10.1109/LED.2002.1015232

URI

https://scholars.lib.ntu.edu.tw/handle/123456789/485314

SDGs

[SDGs]SDG7

Type

journal article