Electrical Characterization of Al-SiO2-Si Capacitors with Thin Gate Oxides Grown on Non-planar Substrates
Date Issued
2012
Date
2012
Author(s)
Yang, Chao-Shun
Abstract
Because of the development of process technology of semiconductor and the existence of the Moore， law, the size of device is scaling down continuously. However, shrinking eventually encounters the limit. In order to make the size shrinking continue, non-planar structure was proposed. Due to the difference of structures, the electrical characteristics of non-planar structures are different for planar, and the exploring of the electrical characteristics of non-planar devices becomes an important issue. In this work, it was found that the uniformity of non-planar devices is worse than planar ones. According to the calculation of the interface trap density, additional interface traps due to the side walls and corners of non-planar devices were observed. In addition, we find the uniformity of large devices is worse than small ones.
When measuring current density-voltage (J-V) characteristics, we know that the inversion current is mainly dominated by minority carrier generation-recombination current, which is strongly dependent on temperature. So we investigate the current conduction mechanism with various temperature measurements of non-planar and planar devices. Finally, it was observed that the inversion current of planar devices will saturate, however, the inversion current of the non-planar devices will not. This phenomenon is also related to the uniformity of devices. It is of importance to study the uniformity of devices.
Subjects
SiO2
C-V curve
nonuniformity
Type
thesis
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