The Luminescent Characteristic of Metal-Oxide-Semiconductor with different metal and Substrate
Date Issued
2007
Date
2007
Author(s)
Wu, Huan-Chih
DOI
zh-TW
Abstract
The main advantages of silicon germanium electro- optical devices are the highly compatibility with process of silicon integrated circuits. The radiation and absorption wavelength of Si-Ge devices fall about 1.3 um to 1.55 um and it is important for application in optical fiber communication. The process technologies of devices are now matured, such as Si-Ge light emission device, modulator and photodetector, and these are helpful to the development of silicon electro- optical devices and electro-optical integrated circuits.
In the thesis, a basic metal-oxide-semiconductor structure light emission device and a metal-oxide-semiconductor structure light emission device with Ge quantum dots in oxide layer were fabricated. The emission strength of Ge quantum dots were distinguished as digital signal in 0 or 1, so that this device could be applied in electro-optical integrated circuits as memories storing charges.
P-type normal doping, n-type normal doping and n-type high doping substrates were used and the deposited metals were Al, Ag and Au. Then the tunneling oxide was also changed and the light emission characteristics of these devices were discussed. The band diagram was used to explain the effect. The voltage, current and power was viewed to determine efficiency.
Subjects
光電積體電路
電激發光
metal
oxide
MOS
OEIC
EL
Type
thesis
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