Application of MSM Schottky Detector on Surface Plasmon Resonance Sensing
Date Issued
2011
Date
2011
Author(s)
Wen, Tsun-Yu
Abstract
Surface Plasmon Resonance (SPR) has been widely applied on physical, chemical and biological sensing. Traditional SPR sensing method use photodetector such as CCD camera and photodiode. Such device is huge and hard to integrate with other device such as semiconductor device.
Novel method integrate SPR sensor with photodetector such as Schottky detector. It transform SPR optical signal to electrical signal. Schottky detector is constituted by metal and semiconductor. When the energy of incident light exceeds the Schottky barrier of Schottky detector, the electron of metal will cross the Schottky barrier and become current, which is called internal photoemission. When SPR occurs, the internal photoemission of Schottky detector will be enhanced, and the current increases. The optical signal of SPR therefore transform to electrical signal.
In this thesis, we design a MSM Schottky detector consist of Au and ZnO. We use FDTD method to simulate the effect of ZnO thickness on SPR performance, and measure SPR Curve of device to prove the simulation. We construct a measurement system integrate SPR measurement system and electrical measurement system. The core of measurement system is lock-in amplifier.
The current of Schottky detector is measured simultaneously with SPR optical signal. The measurement result shows although the lowest detection limit is not as good as SPR measurement , such device is still capable of detect SPR optical signal via Schottky detector electrical signal.
Subjects
Surface Plamon Resonance
Internal Photoemission
MSM Schottky detector
FDTD Method,
ZnO
Type
thesis
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