Unipolar resistive switching memory characteristics using IrOx/Al2O3/SiO2/p-Si MIS structure
Journal
ECS Transactions
Journal Volume
45
Journal Issue
3
Pages
345-348
Date Issued
2012
Author(s)
Abstract
Unipolar resistive switching memory characteristics using high-κ Al2O3 film in an IrOx/Al2O3/SiO2/p-Si metal-insulator-semiconductor (MIS) structure have been investigated. The devices show hysteresis memory window of ~0.9 V with a sweeping gate voltage of +/- 6 V, which proves charge trapping phenomena of the Al2O3 film. A sufficiently large resistance ratio of ~1e3 at a self limited current compliance of 100 uA is obtained, due to the defective Al2O3 film. A large resistance ratio of >1e3 after 10 years of data retention is obtained for future nanoscale nonvolatile memory application.
SDGs
Type
conference paper