Unipolar resistive switching memory characteristics using IrOx/Al2O3/SiO2/p-Si MIS structure

Journal

ECS Transactions

Journal Volume

45

Journal Issue

3

Pages

345-348

Date Issued

2012

Author(s)

Banerjee, W.

Maikap, S.

Chen, Y.-Y.

Yang, J.R.

DOI

10.1149/1.3700898

URI

https://scholars.lib.ntu.edu.tw/handle/123456789/491572

URL

https://www.scopus.com/inward/record.uri?eid=2-s2.0-84869072087&doi=10.1149%2f1.3700898&partnerID=40&md5=50c7b41dc79a7ebadcfb53c3868258ec

Type

conference paper