The Development of Accur ate Model Considering the Proximity Effect to Guide the BEOL Metal Scheme Design in the Advanced Logic Device
Journal
2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022
Date Issued
2022
Author(s)
Abstract
The accurate model to calculate nanoscale metal resistivity in the advanced logic device is developed. In this model, vicinity compensation for the proximity effect is considered together with bulk, grain boundary, and interface scatterings. With this model, the design optimization of Cu reflow and Ru liner thickness are studied in N10 and N5 technology nodes. Our modeling results agree with experimental insights of metal interconnects, guiding the design of future BEOL metal scheme and Power via applications. © 2022 IEEE.
Other Subjects
Computer circuits; Grain boundaries; Logic devices; Accurate modeling; Advanced-logic device; Bulk grains; Grain boundary scattering; Grain interface; Interface scattering; Metal resistivity; Nanoscale metals; Proximity effects; Scheme design; Metals
Type
conference paper