Spin-Polarized Transport and Dynamics in Magnetic Tunneling Structures
Resource
IEEE Transactions on Magnetics, 45(10), 3434-3440
Journal
IEEE Transactions on Magnetics
Pages
3434-3440
Date Issued
2009
Date
2009
Author(s)
Cao, R.
Moriyama, T.
Wang, W.G.
Fan, X.
Kolodzey, J.
Chen, S.H.
Chang, C.R.
Tserkovnyak, Y.
Nikolic, B.K.
Abstract
In the first part of this paper, we report a systematic study on the structural evolution under rapid thermal annealing and the corresponding transport properties in magnetic tunnel junctions (MTJs) with a crystalline MgO barrier. The results clearly indicate that high tunneling magnetic resistance can be achieved by annealing MTJs at a very short time, and it is directly related to the formation of (001) crystalline structures. In the second part, we report the spin dynamics in tunneling structure through direct electrical detection. A surprisingly large voltage generation in F/I/N and F/I/F junctions was observed, which is contradictory to the prediction from the standard spin-pumping theory. We proposed a theoretical formalism to study spin-pumping effects in ferromagnetic multilayer structures. The formalism can yield a remarkably clean physical picture of the spin and charge pumping in tunneling structures. The calculated values are consistent with experimental results.
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