Interfacial layer reduction and high permittivity tetragonal ZrO 2 on germanium reaching ultrathin 0.39 nm equivalent oxide thickness
Journal
Applied Physics Letters
Journal Volume
102
Journal Issue
23
Date Issued
2013
Author(s)
Abstract
The nearly free interfacial layer and the tetragonal phase ZrO2 with the high permittivity of 45 ± 3 on Ge (001) substrate lead to the equivalent oxide thickness as low as 0.39 nm and the low leakage current density of 2 × 10−3 A/cm−2. The ultrathin GeON layer formed by remote plasma treatment on GeO2/Ge can inhibit the interfacial layer regrowth by retarding the interdiffusion of Ge and O atoms. The initial ∼1 nm GeO2 layer is consumed during the remote plasma treatment, confirmed by x-ray photoelectron spectroscopy and further thinned down by post-deposition annealing to trigger the GeO desorption.
SDGs
Type
journal article