Preparation of p-type SnO Thin Films and Transistors by Sputtering with Robust Sn/SnO2 Mixed Target in Hydrogen-Containing Atmosphere
Journal
Thin solid Films
Journal Volume
585
Journal Issue
1
Pages
672-683
Date Issued
2015
Author(s)
Po-Ching Hsu
Shiao-Po Tsai
Ching-Hsiang Chang
Chao-Jui Hsu
WEI-CHUNG CHENG
Hsing-Hung Hsieh
Abstract
In this work, we have investigated sputtering deposition of p-type SnO using the robust Sn/SnO2 mixed target in a hydrogen-containing atmosphere. The effects of the hydrogen-containing sputtering gas on structures, compositions, and electrical properties of deposited SnOX films were studied. While the SnO2/SnO mixed phase was generally obtained by sputteringwith the Sn/SnO2 mixed target in the pure Ar atmosphere, rather pure polycrystalline SnO films with single preferential orientation could be readily obtained by introducing an appropriate amount of hydrogen into the sputtering gas and by appropriate post-annealing (e.g., 300 °C). SnO films thus obtained exhibited a p-type Hall mobility of up to ∼2 cm2 V-1 s-1 and p-type SnO thin-film transistors using such SnO films were also demonstrated, showing a field-effect mobility of up to 1.16 cm2 V-1 s-1. © 2015 Elsevier B.V. All rights reserved.
Subjects
Oxide semiconductor; P-type; Sputtering; Thin film transistor; Tin oxide
Other Subjects
Annealing; Field effect transistors; Hall mobility; Hydrogen; Semiconducting organic compounds; Sputtering; Thin film transistors; Thin films; Tin; Tin oxides; Transistors; Film preparation; Field-effect mobilities; Oxide semiconductor; P-type; Polycrystalline; Post annealing; Preferential orientation; Sputtering deposition; Sputtering gas; Film preparation; Thin films
Type
journal article