Suppression of short channel effects in FinFETs using crystalline ZrO2 high-K/Al2O3 buffer layer gate stack for low power device applications

Journal

Semiconductor Science and Technology

Journal Volume

33

Journal Issue

3

Date Issued

2018

Author(s)

Tsai, M.-C.

Wang, C.-I.

Chen, Y.-C.

Chen, Y.-J.

Li, K.-S.

Chen, M.-C.

Chen, M.-J.

DOI

10.1088/1361-6641/aaab01

URI

https://scholars.lib.ntu.edu.tw/handle/123456789/491721

URL

https://www.scopus.com/inward/record.uri?eid=2-s2.0-85043477900&doi=10.1088%2f1361-6641%2faaab01&partnerID=40&md5=8926d17b7a5513eef06034ce0604fa4e

SDGs

[SDGs]SDG7

Type

journal article