Compact current model for mesa-isolated fully-depleted ultrathin SOI NMOS devices considering sidewall-related narrow channel effects

Resource

SOI Conference, 1997. Proceedings., 1997 IEEE International

Journal

IEEE International SOI Conference

Pages

-

Date Issued

1997-10

Date

1997-10

Author(s)

Kuo, J.B.

Su, K.W.

DOI

DOI

1078-621X

URI

Type

journal article

File(s)

Name

00634944.pdf

Size

209.91 KB

Format

Adobe PDF

Checksum

(MD5):52a3c801de2a14723cf5a8e4d3313b62