Compact current model for mesa-isolated fully-depleted ultrathin SOI NMOS devices considering sidewall-related narrow channel effects
Resource
SOI Conference, 1997. Proceedings., 1997 IEEE International
Journal
IEEE International SOI Conference
Pages
-
Date Issued
1997-10
Date
1997-10
Author(s)
Kuo, J.B.
Su, K.W.
DOI
1078-621X
Abstract
This paper presents the sidewall-related narrow channel effects on the current conduction in mesa-isolated fully-depleted ultra-thin SOI NMOS devices. As verified by the 3D simulation results, the dosed-form analytical model predicts that in the subthreshold region the channel current near the sidewall dominates due to narrow channel effects.
Type
journal article
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