Ga2O3(Gd2O3) on Ge without interfacial layers: Energy-band parameters and metal oxide semiconductor devices

Journal

Applied Physics Letters

Journal Volume

94

Journal Issue

20

Date Issued

2009

Author(s)

Chu, L.K.

Lin, T.D.

Huang, M.L.

Chu, R.L.

Chang, C.C.

Kwo, J.

DOI

10.1063/1.3139772

URI

https://scholars.lib.ntu.edu.tw/handle/123456789/443401

URL

https://www.scopus.com/inward/record.uri?eid=2-s2.0-65949104293&doi=10.1063%2f1.3139772&partnerID=40&md5=ffce08f0b618b7760d4ae7892eea224c

Type

journal article