Analysis of gate misalignment effect on the threshold voltage of double-gate (DG) ultrathin fully-depleted (FD) silicon-on-insulator (SOI) NMOS devices using a compact model considering fringing electric field effect
Resource
Electron Devices for Microwave and Optoelectronic Applications, 2003. EDMO 2003. The 11th IEEE International Symposium on
Journal
The 11th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications, 2003. EDMO 2003.
