Self-aligned Top-gate Coplanar In-Ga-Zn-O Thin Film Transistors
Journal
Journal of Display Technology
Journal Volume
5
Journal Issue
12
Pages
515-519
Date Issued
2009
Date
2009
Author(s)
Abstract
Self-aligned techniques are often used in conventional CMOS and Si-based thin-film transistors (TFTs) technologies due to various merits. In this paper, we report self-aligned coplanar top-gate InGaZnO TFTs using PECVD a-SiN infin :H patterned to have low hydrogen content in the channel region and high hydrogen content in the source/drain region. After annealing to induce hydrogen diffusion from a-SiN infin :H into the oxide semiconductor, the source-drain regions become more conductive and yet the channel region remains suitable for TFT operation, yielding a working self-aligned TFT structure. Such fabrication involves neither back-side exposure nor ion implantation, and thus may be compatible with the typical and cost-effective TFT manufacturing.
Type
journal article
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