Temperature-dependent behaviors of the surface plasmon coupling with an InGaN/GaN quantum well
Journal
2007 IEEE/LEOS International Conference on Optical MEMS and Nanophotonics, OMENS
Pages
127-128
Date Issued
2007
Author(s)
Abstract
We demonstrate the temperature dependent behavior of the surface plasmon (SP) coupling with an InGaN/GaN quantum well (QW). The SP coupling efficiency relies on the availability of carriers with sufficient momentum for transferring the energy and momentum into the SP modes. At low temperatures, the carriers are trapped by the potential minima in the QW and the SP coupling is weak. As temperature increases, more and more carriers escape from the potential minima leading to the stronger and stronger SP coupling. When the temperature is close to the room condition, the SP coupling strength saturates because most carriers have escaped from the potential minima. The three temperature ranges of different SP coupling behaviors can be clearly identified from the data of photoluminescence (PL) enhancement ratio and PL intensity decay rate. © 2007 IEEE.
Subjects
InGaN/GaN; Quantum well; Surface plasmon; Temperature-dependence
SDGs
Other Subjects
Civil aviation; Composite micromechanics; Decay (organic); Energy efficiency; Light emission; Luminescence; MEMS; Microelectromechanical devices; Nanostructured materials; Photonics; Plasmons; Semiconductor quantum wires; Coupling efficiencies; Coupling strengths; Decay rates; InGaN/GaN; InGaN/GaN quantum well; International conferences; Low temperatures; Nano-photonics; Optical MEMS; Photoluminescence enhancement; PL intensity; Potential minima; Quantum well; Surface plasmon; Surface plasmon coupling; Temperature dependent behavior; Temperature-dependence; Temperature-dependent; Three temperature; Semiconductor quantum wells
Type
conference paper