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  4. Modulation and Direct Mapping of the Interfacial Band Alignment of an Eco-Friendly Zinc-Tin-Oxide Buffer Layer in SnS Solar Cells
 
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Modulation and Direct Mapping of the Interfacial Band Alignment of an Eco-Friendly Zinc-Tin-Oxide Buffer Layer in SnS Solar Cells

Journal
ACS Applied Energy Materials
Journal Volume
5
Journal Issue
11
Date Issued
2022-11-28
Author(s)
Ho, Thi Thong
Yang, Zi Liang
Fu, Fang Yu
Jokar, Efat
Hsu, Hung Chang
Liu, Pei Chi
Quadir, Shaham
Chen, Cheng Ying
YA-PING CHIU  
CHIH-I WU  
Chen, Kuei Hsien
LI-CHYONG CHEN  
DOI
10.1021/acsaem.2c03129
URI
https://scholars.lib.ntu.edu.tw/handle/123456789/633928
URL
https://api.elsevier.com/content/abstract/scopus_id/85141674811
Abstract
In thin-film solar cells (TFSCs), the buffer layer plays a vital role in enhancing the power conversion efficiency (PCE) by improving the charge carrier dynamics. In the present study, a series of eco-friendly Zn1-xSnxOy (ZTO, 0 ≤ x ≤ 1) films grown by atomic layer deposition are used as buffer layers in the SnS-based TFSCs. We systematically investigate the effect of the Zn-to-Sn ratio on the band alignment at the SnS/ZTO heterojunction. The results revealed that by controlling the Zn-to-Sn ratio in the ZTO films, the energy band alignment changed from a "cliff-type"(9%Sn-ZTO41) to a "spike-type"(18%Sn-ZTO11). The spike-type band configuration with appropriate conduction band offset (CBO<0.4 eV) at the SnS/ZTO11 junction is visualized by cross-sectional scanning tunneling microscopy. This favorable CBO at the heterojunction reduces the interfacial recombination and enhances the charge collection probability in the ZTO11 device, ultimately significantly improving the open-circuit voltage (Voc) from 0.24 V to 0.34 V. The charge recombination mechanisms in the ZTO-based TFSCs is elaborated and compared with the CdS-based one, and the result confirms the charge recombination suppression at the SnS/ZTO11 interface. Moreover, the photocurrent in all ZTO-based TFSCs is significantly higher than CdS-based ones due to the broader band gap of ZTO compared to CdS. Improvements in Voc and Jsc significantly increase the PCE from 1.7% (CdS buffer layer) to 3% (ZTO11 with 18% Sn). This study highlights the potential of ZTO as an effective and environmentally friendly buffer layer in anisotropic photovoltaic materials.
Subjects
Cd-free buffer layer | eco-friendly solar cells | interface engineering | SnS-based photovoltaics | zinc-tin-oxide buffer layer
SDGs

[SDGs]SDG7

Type
journal article

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